Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier

被引：9

作者：

Schwindt, RS ^{[1
]}

Kumar, V ^{[1
]}

Aktas, O ^{[1
]}

Lee, JW ^{[1
]}

Adesida, I ^{[1
]}

机构：

[1] Union Univ, Dept Engn, Jackson, TN 38305 USA

来源：

2004 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2004: 26TH ANNIVERSARY: COMPOUNDING YOUR CHIPS IN MONTEREY | 2004年

关键词：

GaN; gallium nitride; SiC; wide bandgap; HEMT; low noise; amplifier; MMIC;

D O I：

10.1109/CSICS.2004.1392536

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increasedfrom 2.5 dB at 43 degreesC to 5. 0 dB at 150 degreesC.

引用

页码：201 / 203

页数：3

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