Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier

被引：9
|
作者：
Schwindt, RS [1 ]
Kumar, V [1 ]
Aktas, O [1 ]
Lee, JW [1 ]
Adesida, I [1 ]
机构：
[1] Union Univ, Dept Engn, Jackson, TN 38305 USA
来源：
2004 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2004: 26TH ANNIVERSARY: COMPOUNDING YOUR CHIPS IN MONTEREY | 2004年
关键词：
GaN; gallium nitride; SiC; wide bandgap; HEMT; low noise; amplifier; MMIC;
D O I：
10.1109/CSICS.2004.1392536
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increasedfrom 2.5 dB at 43 degreesC to 5. 0 dB at 150 degreesC.
引用
收藏
页码：201 / 203
页数：3
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