GaN-based Single Stage Low Noise Amplifier for X-band Applications

被引：1

作者：

Caglar, Gizem Tendurus ^{[1
]}

Aras, Yunus Erdem ^{[2
]}

Urfali, Emirhan ^{[1
]}

Yilmaz, Dogan ^{[1
]}

Ozbay, Ekmel ^{[2
]}

Nazlibilek, Sedat ^{[3
]}

机构：

[1] Nanotechnol Res Ctr NANOTAM, Ankara, Turkey

[2] Bilkent Univ, Nanotechnol Res Ctr NANOTAM, Dept Elect & Elect Engn, Ankara, Turkey

[3] Baskent Univ, Dept Elect & Elect Engn, Ankara, Turkey

来源：

PROCEEDINGS OF THE 2022 21ST MEDITERRANEAN MICROWAVE SYMPOSIUM (MMS 2022) | 2022年

关键词：

GaN HEMT; low noise amplifier; X-band; source degeneration; MMIC; SiC;

D O I：

10.1109/MMS55062.2022.9825558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Source degenerated HEMTs are used to achieve good noise matching and better input return loss without degrading the noise figure and reducing the stability. This work presents an MMIC design for the frequency band of 8 -11 GHz by using HEMTs with source degeneration in 0.15 mu m GaN on SiC technology. All design work is done in the Advanced Design System. The LNA delivers more than 6.9 dB gain with better than 8.5 dB and 9.5 dB input and output return losses, respectively. In addition, the gain ripple is around 2.7 dB. The noise figure of the amplifier is achieved below 1.1 dB with P1dB of 17.2 dBm and %12.7 drain efficiency within the operating bandwidth at the bias conditions of 9 V/20 mA.

引用

页码：446 / 449

页数：4

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