A 0.18 μm CMOS X-BAND Low Noise Amplifier for Space Applications

被引:3
|
作者
Sahin, Nergiz [1 ]
Yelten, Mustafa Berke [1 ]
机构
[1] Istanbul Tech Univ, Elect & Commun Engn, Istanbul, Turkey
关键词
Low noise amplifier (LNA); complementary metal oxide semiconductor (CMOS); cryogenic; radiation; noise figure; RECEIVERS; LNA;
D O I
10.1109/NGCAS.2017.12
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 7 GHz X-band low noise amplifier for space applications is designed using 0.18 mu m UMC CMOS Mixed-Mode/RF technology. The LNA is designed for being tested at temperatures below 100 K (also called cryogenic temperatures) and under radiation. Inductively degenerated cascode topology is used and an extra bias inductor has been added to improve input matching. Designed CMOS LNA achieves a voltage gain higher than 15 dB, noise figure of 2.6 dB, IIP3 of -2.4 dBm while consuming 25 mW of power.
引用
收藏
页码:205 / 208
页数:4
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