A 0.18 μm CMOS X-BAND Low Noise Amplifier for Space Applications

被引：3

作者：

Sahin, Nergiz ^{[1
]}

Yelten, Mustafa Berke ^{[1
]}

机构：

[1] Istanbul Tech Univ, Elect & Commun Engn, Istanbul, Turkey

来源：

2017 FIRST NEW GENERATION OF CAS (NGCAS) | 2017年

关键词：

Low noise amplifier (LNA); complementary metal oxide semiconductor (CMOS); cryogenic; radiation; noise figure; RECEIVERS; LNA;

D O I：

10.1109/NGCAS.2017.12

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 7 GHz X-band low noise amplifier for space applications is designed using 0.18 mu m UMC CMOS Mixed-Mode/RF technology. The LNA is designed for being tested at temperatures below 100 K (also called cryogenic temperatures) and under radiation. Inductively degenerated cascode topology is used and an extra bias inductor has been added to improve input matching. Designed CMOS LNA achieves a voltage gain higher than 15 dB, noise figure of 2.6 dB, IIP3 of -2.4 dBm while consuming 25 mW of power.

引用

页码：205 / 208

页数：4

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