Direct nm-scale spatial mapping of traps in CIGS

被引：0

作者：

Paul, P. K. ^{[1
]}

Cardwell, D. W. ^{[1
]}

Jackson, C. M. ^{[1
]}

Galiano, K. ^{[2
]}

Aryal, K. ^{[3
]}

Pelz, J. P. ^{[2
]}

Marsillac, S. ^{[3
]}

Ringel, S. A. ^{[1
,4
]}

Grassman, T. J. ^{[5
]}

Arehart, A. R. ^{[1
]}

机构：

[1] Ohio State Univ, Elect & Comp Engn, Columbus, OH 43210 USA

[2] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[3] Old Dominion Univ, Elect & Comp Engn, Norfolk, VA USA

[4] Ohio State Univ, Inst Mat Res, Columbus, OH 43210 USA

[5] Ohio State Univ, Mat Sci & Engn, Columbus, OH 43210 USA

来源：

2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2015年

关键词：

FILM SOLAR-CELLS; DEFECT PHYSICS; CU(IN; GA)SE-2;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Using newly developed nanometer-scale deep level transient (nano-DLTS) spectroscopy, the spatial distribution of the Ev+0.47 eV trap in p-type Cu(In,Ga)Se-2 (CIGS) is mapped simultaneously with topography to correlate the electrical traps with physical structure. It is demonstrated that the Ev+0.47 eV trap properties using nano-DLTS match the observed macroscopic properties. Additionally, the Ev+0.47 eV map reveals that this trap is not uniformly distributed, is likely correlated with specific grain boundaries, and not related to all grain boundaries. The combined multi-scale approach reveals overall trap impact as well as correlation with physical structures on the nm-scale that can be broadly applied to any semiconductor material.

引用

页数：3

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