Surface-driven electronic structure in LaFeAsO studied by angle-resolved photoemission spectroscopy

被引：37
|
作者：
Liu, Chang [1 ,2 ]
Lee, Yongbin [1 ]
Palczewski, A. D. [1 ,2 ]
Yan, J-Q. [1 ]
Kondo, Takeshi [1 ,2 ]
Harmon, B. N. [1 ,2 ]
McCallum, R. W. [1 ,3 ]
Lograsso, T. A. [1 ]
Kaminski, A. [1 ,2 ]
机构：
[1] Ames Lab, Div Engn & Mat Sci, Ames, IA 50011 USA
[2] Iowa State Univ, Dept Phys & Astron, Ames, IA 50011 USA
[3] Iowa State Univ, Dept Mat Sci & Engn, Ames, IA 50011 USA
来源：
PHYSICAL REVIEW B | 2010年 / 82卷 / 07期
关键词：
NODELESS SUPERCONDUCTING GAPS; IRON; COMPOUND; ARPES;
D O I：
10.1103/PhysRevB.82.075135
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We measured the electronic structure of an iron arsenic parent compound LaFeAsO using angle- resolved photoemission spectroscopy (ARPES). By comparing with a full- potential linear augmented plane wave calculation we show that the extra large Gamma hole pocket measured via ARPES comes from electronic structure at the sample surface. Based on this we discuss the strong- polarization dependence of the band structure and a temperature- dependent holelike band around the M point. The two phenomena give additional evidences for the existence of the surface- driven electronic structure.
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页数：6
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