Chemical bath deposited (CBD) ZnS buffer layer for CIGSS solar cells

被引：1

作者：

Kundu, S ^{[1
]}

Olsen, LC ^{[1
]}

机构：

[1] Washington State Univ Tri Cities, Elect Mat Lab, Richland, WA 99352 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190648

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cadmium free buffer layers for Cu(in,Ga)SxSe2-x (CIGSS) thin film solar cells have been fabricated using a chemical bath deposition (CBD) technique. The purpose of this work was to replace the chemically deposited CdS buffer layer with an alternative non-cadmium buffer layer. In this study a major effort was made to improve quality of the ZnS buffer layers on 4 cm(2) (2 cm X 2cm) CIGSS substrates. The use of CBD-ZnS layer, which is a higher band gap material than CBD-CdS, improved the quantum efficiency of the fabricated cells at short wavelengths, leading to a acceptable short circuit current (J(sc)). The best cell yielded an active area efficiency of 13.3% on 0.42 cm(2) as measured by NREL.

引用

页码：648 / 651

页数：4

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