Chemical bath deposited (CBD) ZnS buffer layer for CIGSS solar cells

被引：1
|
作者：
Kundu, S [1 ]
Olsen, LC [1 ]
机构：
[1] Washington State Univ Tri Cities, Elect Mat Lab, Richland, WA 99352 USA
来源：
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年
关键词：
D O I：
10.1109/PVSC.2002.1190648
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Cadmium free buffer layers for Cu(in,Ga)SxSe2-x (CIGSS) thin film solar cells have been fabricated using a chemical bath deposition (CBD) technique. The purpose of this work was to replace the chemically deposited CdS buffer layer with an alternative non-cadmium buffer layer. In this study a major effort was made to improve quality of the ZnS buffer layers on 4 cm(2) (2 cm X 2cm) CIGSS substrates. The use of CBD-ZnS layer, which is a higher band gap material than CBD-CdS, improved the quantum efficiency of the fabricated cells at short wavelengths, leading to a acceptable short circuit current (J(sc)). The best cell yielded an active area efficiency of 13.3% on 0.42 cm(2) as measured by NREL.
引用
收藏
页码：648 / 651
页数：4
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