Examination of flatband and threshold voltage tuning of HfO2/TiN field effect transistors by dielectric cap layers

The authors have examined the role of sub nanometer La2O3 and LaN cap layers interposed in Si/HfO2/TiN high-k gate dielectric stacks in tuning the flatband and threshold voltages of capacitors and transistors. High performance, band edge n metal oxide field effect transistors with channel lengths down to 60 nm may be fabricated without significant compromise in mobility, electrical thickness, and threshold voltage. They have carried out a microstructural evaluation of these stacks and correlated these results with the electrical behavior of the devices. (c) 2007 American Institute of Physics.