Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO2 dielectric

被引：0
|
作者：
韩锴 [1 ,2 ]
王晓磊 [2 ]
杨红 [2 ]
王文武 [2 ]
机构：
[1] Department of Physics and Electronic Science, Weifang University
[2] Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
来源：
Chinese Physics B | 2013年 / 22卷 / 11期
关键词：
high-k dielectric; HfGdOx; interface dipole; flatband voltage shift;
D O I：
暂无
中图分类号：
TN386.1 [金属-氧化物-半导体（MOS）器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Gd-doped HfO2 has drawn worldwide interest for its interesting features.It is considered to be a suitable material for N-type metal-oxide-semiconductor(MOS)devices due to a negative flatband voltage(Vfb)shift caused by the Gd doping.In this work,an anomalous positive shift was observed when Gd was doped into HfO2.The cause for such a phenomenon was systematically investigated by distinguishing the effects of different factors,such as Fermi level pinning(FLP),a dipole at the dielectric/SiO2interface,fixed interfacial charge,and bulk charge,on Vfb.It was found that the FLP and interfacial dipole could make Vfbnegatively shifted,which is in agreement with the conventional dipole theory.The increase in interfacial fixed charge resulting from Gd doping plays a major role in positive Vfbshift.
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页码：589 / 592
页数：4
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