Ferroelectricity in Gd-Doped HfO2 Thin Films

被引：234
|
作者：
Mueller, S. [1 ]
Adelmann, C. [2 ]
Singh, A. [1 ]
Van Elshocht, S. [2 ]
Schroeder, U. [1 ]
Mikolajick, T. [1 ,3 ]
机构：
[1] Namlab gGmbH, D-01187 Dresden, Germany
[2] IMEC, B-3001 Louvain, Belgium
[3] Tech Univ Dresden, Chair Nanoelect Mat, D-01062 Dresden, Germany
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2012年 / 1卷 / 06期
关键词：
POLARIZATION;
D O I：
10.1149/2.002301jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The incorporation of Gd into HfO2 thin films is shown to induce ferroelectricity. A significant influence of electric field cycling on both polarization as well as small-signal capacitance-voltage measurements can be observed. X-ray diffraction measurements are supported by infrared absorption analysis and give further evidence of the previously proposed non-centrosymmetric transition phase of space group Pbc2(1). (C) 2012 The Electrochemical Society. All rights reserved.
引用
收藏
页码：N123 / N126
页数：4
相关论文
共 50 条
  • [1] Atomic Layer Deposition of Gd-Doped HfO2 Thin Films
    Adelmann, C.
    Tielens, H.
    Dewulf, D.
    Hardy, A.
    Pierreux, D.
    Swerts, J.
    Rosseel, E.
    Shi, X.
    Van Bael, M. K.
    Kittl, J. A.
    Van Elshocht, S.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (04) : G105 - G110
  • [2] Structure and magnetic properties of pure and Gd-doped HfO2 thin films
    Wang, Wendong
    Hong, Yuanjia
    Yu, Minghui
    Rout, Bibhudutta
    Glass, Gary A.
    Tang, Jinke
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
  • [3] Structure and magnetic properties of pure and Gd-doped HfO2 thin films
    Wang, Wendong
    Hong, Yuanjia
    Yu, Minghui
    Rout, Bibhudutta
    Glass, Gary A.
    Tang, Jinke
    Journal of Applied Physics, 2006, 99 (08):
  • [4] Intrinsic ferroelectricity in Y-doped HfO2 thin films
    Yun, Yu
    Buragohain, Pratyush
    Li, Ming
    Ahmadi, Zahra
    Zhang, Yizhi
    Li, Xin
    Wang, Haohan
    Li, Jing
    Lu, Ping
    Tao, Lingling
    Wang, Haiyan
    Shield, Jeffrey E.
    Tsymbal, Evgeny Y.
    Gruverman, Alexei
    Xu, Xiaoshan
    NATURE MATERIALS, 2022, 21 (08) : 903 - +
  • [5] Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
    Mueller, Stefan
    Mueller, Johannes
    Singh, Aarti
    Riedel, Stefan
    Sundqvist, Jonas
    Schroeder, Uwe
    Mikolajick, Thomas
    ADVANCED FUNCTIONAL MATERIALS, 2012, 22 (11) : 2412 - 2417
  • [6] Intrinsic ferroelectricity in Y-doped HfO2 thin films
    Yu Yun
    Pratyush Buragohain
    Ming Li
    Zahra Ahmadi
    Yizhi Zhang
    Xin Li
    Haohan Wang
    Jing Li
    Ping Lu
    Lingling Tao
    Haiyan Wang
    Jeffrey E. Shield
    Evgeny Y. Tsymbal
    Alexei Gruverman
    Xiaoshan Xu
    Nature Materials, 2022, 21 : 903 - 909
  • [7] Dielectric Properties of Pure and Gd-Doped HfO2 Ceramics
    Wang, Chunchang
    Zhang, Da
    Wang, Hong
    Yu, Yi
    Li, Yide
    Li, Qiuju
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2015, 98 (12) : 3918 - 3924
  • [8] On the structural origins of ferroelectricity in HfO2 thin films
    Sang, Xiahan
    Grimley, Everett D.
    Schenk, Tony
    Schroeder, Uwe
    LeBeau, James M.
    APPLIED PHYSICS LETTERS, 2015, 106 (16)
  • [9] Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks
    Nishimura, Tomonori
    Xu, Lun
    Shibayama, Shigehisa
    Yajima, Takeaki
    Migita, Shinji
    Toriumi, Akira
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (08)
  • [10] The improvement of performance of HfO2/Gd2O3/Si stack compared with Gd-doped HfO2 High-k films
    Wang, Xiaona
    Zhang, Xinqiang
    Xiong, Yuhua
    Du, Jun
    Yang, Mengmeng
    Wang, Lei
    Tu, Hailing
    FUNCTIONAL AND ELECTRONIC MATERIALS, 2011, 687 : 209 - 214
12345