CMOS 6-T SRAM cell design subject to ''atomistic" fluctuations

Intrinsic parameter fluctuations adversely affect SRAM cell stability, and will become one of the major factors limiting future CMOS 6-T SRAM scaling. In this work, using the driveability ratio and cell ratio parameters, and employing 'Write Assist' technology, we present a compromise design methodology which can balance WNM and SNM performance, improving CMOS 6-T SRAM scalability in the decananometer regime. The feasibility of the approach is demonstrated through detailed statistical SRAM simulations using models calibrated against MOSFETs with physical gate length of 35 nm. (c) 2007 Elsevier Ltd. All rights reserved.