Temperature dependence of drain-induced-barrier lowering in fully depleted SOI MOSFETs

被引：0
|
作者：
Jomaah, J
Ghibaudo, G
Pelloie, JL
Balestra, F
机构：
来源：
PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES | 1996年 / 96卷 / 03期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The temperature dependence of Drain Induced Barrier Lowering (DIBL) in submicron MOSFETs/SOI is investigated as a function of temperature in the range 20-300K. It is found that the DIBL effect is almost temperature independent. Contrary to the front gate voltage, the back Sate voltage has a strong influence on the DIBL parameter, resulting in a reduction of about a factor of 25 as the device is pushed towards volume inversion.
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页码：287 / 291
页数：5
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