Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture

被引：51
|
作者：
Zhou, Guangdong [1 ,2 ]
Sun, Bai [3 ]
Ren, Zhijun [1 ]
Wang, Lidan [3 ]
Xu, Cunyun [2 ]
Wu, Bo [4 ]
Li, Ping [4 ]
Yao, Yanqing [2 ]
Duan, Shukai [2 ]
机构：
[1] Guizhou Inst Technol, Sch Sci, Guiyang 55003, Guizhou, Peoples R China
[2] Southwest Univ, Sch Artificial Intelligence, Chongqing 400715, Peoples R China
[3] Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China
[4] Zunyi Normal Coll, Sch Phys & Elect Sci, Zunyi 563002, Peoples R China
来源：
CHEMICAL COMMUNICATIONS | 2019年 / 55卷 / 67期
关键词：
MEMRISTOR; MECHANISM;
D O I：
10.1039/c9cc04069b
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A device with the lateral structure of Ag vertical bar MnOx vertical bar Ag was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.
引用
收藏
页码：9915 / 9918
页数：4
相关论文
共 50 条
  • [1] Visible light-induced resistive switching behaviors in single MnOx nanorod: Reversing between resistor and memristor
    Yang, Xiude
    Ren, Zhijun
    Pan, Fuyan
    Wu, Bo
    Li, Ping
    Zhou, Guangdong
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 802 : 546 - 552
  • [2] Resistive switching behaviors of ZnO nanorod layers
    Chang, Wen-Yuan
    Lin, Chin-An
    He, Jr-Hau
    Wu, Tai-Bor
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (24)
  • [3] Realization of Rectifying and Resistive Switching Behaviors of TiO2 Nanorod Arrays for Nonvolatile Memory
    Zhang, Feng
    Gan, Xiaoyan
    Li, Xiaomin
    Wu, Liang
    Gao, Xiangdong
    Zheng, Renkui
    He, Yong
    Liu, Xinjun
    Yang, Rui
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (10) : H422 - H425
  • [4] Improved Resistive Memory Switching of NiOx/MnOx Double Stack
    Yang, Min Kyu
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2020, 76 (03) : 190 - 193
  • [5] Improved Resistive Memory Switching of NiOx/MnOx Double Stack
    Min Kyu Yang
    [J]. Journal of the Korean Physical Society, 2020, 76 : 190 - 193
  • [6] Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiOx Modulated by Moisture
    Zhou, Guangdong
    Duan, Shukai
    Li, Ping
    Sun, Bai
    Wu, Bo
    Yao, Yanqing
    Yang, Xiude
    Han, Juanjuan
    Wu, Jinggao
    Wang, Gang
    Liao, Liping
    Lin, Cunyan
    Hu, Wei
    Xu, Cunyun
    Liu, Debei
    Chen, Tian
    Chen, Lijia
    Zhou, Ankun
    Song, Qunliang
    [J]. ADVANCED ELECTRONIC MATERIALS, 2018, 4 (04):
  • [7] Asymmetric-Resistive-Switching Device with Reconfigurable Synaptic Functions for Logic-In-Memory
    Zhang, Baizhou
    Guo, Tao
    Zhou, Yongzan
    Lu, Siyan
    Chen, Zuolong
    Zhou, Norman
    Wu, Yimin A.
    [J]. ACS APPLIED ENGINEERING MATERIALS, 2024, 2 (07): : 1873 - 1881
  • [8] Resistive switching behaviors in electrodeposited BaTiOF4 nanorod layers
    Chu, Dewei
    Younis, Adnan
    Tan, Thiam Teck
    Li, Sean
    [J]. SOLID STATE COMMUNICATIONS, 2013, 156 : 38 - 40
  • [9] Logic Gate Functions Built with Nonvolatile Resistive Switching and Thermoresponsive Memory Based on Biologic Proteins
    Sun, Yanmei
    Wen, Dianzhong
    Xie, Yaqin
    Sun, Fengyun
    Mo, Xichao
    Zhu, Jingyuan
    Sun, He
    [J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2019, 10 (24): : 7745 - +
  • [10] Structure and Resistive Switching Behaviors of Cu Doped ZnO Nanorod Array Films
    Hua Haoqiang
    He Xinhua
    Fu Xiaoyi
    [J]. RARE METAL MATERIALS AND ENGINEERING, 2018, 47 : 218 - 222
12345