Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture

被引：51
|
作者：
Zhou, Guangdong [1 ,2 ]
Sun, Bai [3 ]
Ren, Zhijun [1 ]
Wang, Lidan [3 ]
Xu, Cunyun [2 ]
Wu, Bo [4 ]
Li, Ping [4 ]
Yao, Yanqing [2 ]
Duan, Shukai [2 ]
机构：
[1] Guizhou Inst Technol, Sch Sci, Guiyang 55003, Guizhou, Peoples R China
[2] Southwest Univ, Sch Artificial Intelligence, Chongqing 400715, Peoples R China
[3] Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China
[4] Zunyi Normal Coll, Sch Phys & Elect Sci, Zunyi 563002, Peoples R China
来源：
CHEMICAL COMMUNICATIONS | 2019年 / 55卷 / 67期
关键词：
MEMRISTOR; MECHANISM;
D O I：
10.1039/c9cc04069b
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A device with the lateral structure of Ag vertical bar MnOx vertical bar Ag was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.
引用
收藏
页码：9915 / 9918
页数：4
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