Resistive switching behaviors in electrodeposited BaTiOF4 nanorod layers

被引：3
|
作者：
Chu, Dewei [1 ]
Younis, Adnan [1 ]
Tan, Thiam Teck [1 ]
Li, Sean [1 ]
机构：
[1] Univ New S Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
来源：
SOLID STATE COMMUNICATIONS | 2013年 / 156卷
关键词：
BaTiOF4; Electrodeposition; Resistive switching; FILMS;
D O I：
10.1016/j.ssc.2012.12.007
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A layer of well aligned crystalline barium oxofluorotitanate (BaTiOF4) nanorod (NRLs) on Fluorine-Tin-Oxide (FTO) substrates are successfully fabricated by using an electrochemical deposition process. The capacitor with a structure of Au/BaTiOF4 NRLs/FTO exhibits bipolar resistive switching behavior that may be related to the oxygen vacancies. This gives a rise to the formation of straight and extensible conducting filaments along each vertically aligned BaTiOF4 nanorod. The stability of such a resistive switching characteristic demonstrates that BaTiOF4 NRLs are one of the promising materials for next-generation nonvolatile memory applications. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：38 / 40
页数：3
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