Resistive Switching Behaviors of NiO Bilayer Films with Different Crystallinity Layers

The electrical properties of NiO films were significantly dependant on the pO(2) during the film deposition, due to the change of the crystallinity. The well-crystalline film showed resistive switching characteristics whereas the poorly-crystalline film did not. From I-V characteristics of the NiO bilayer film consisting of those two kinds of films, it was found that the initial characteristics were significantly different according to the bias polarity. The forming voltage became lower and had less variety when the well-crystalline side was positively-biased. These results suggest that the forming voltage and currents are controllable by modifying the film properties at the metal-oxide interface.