Monte Carlo Modeling of the Extraction of Roughness Parameters at Nanometer Scale by Critical Dimension Scanning Electron Microscopy

被引：0
|
作者：
Ciappa, M. [1 ]
Ilguensatiroglu, E. [1 ]
Illarionov, A. Yu. [1 ]
Filosomi, F. [2 ]
Santini, C. [2 ]
机构：
[1] ETH, Integrated Syst Lab, CH-8092 Zurich, Switzerland
[2] Univ Perugia, I-06100 Perugia, Italy
来源：
PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014) | 2014年
关键词：
Metrology; Scanning Electron Microscopy; Critical Dimensions; Line Edge Roughness; Monte Carlo Modeling;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Uncertainties in the sub-nanometer range, the use of new materials, roughness, and the three-dimensional structures represent main challenges for the metrology of critical dimensions in nanostructures. In this paper, Monte Carlo modeling is used to investigate the correlation of the "true line edge roughness" of photoresist lines with the roughness rendered by Critical Dimension Scanning Electron Microscopy. Examples are presented, where realistic full-three dimensional photoresist structures in the nanometer range are generated by TCAD process simulation.
引用
收藏
页码：357 / 360
页数：4
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