Modeling secondary electron images for linewidth measurement by critical dimension scanning electron microscopy

被引：18

作者：

Ciappa, Mauro ^{[1
]}

Koschik, Alexander ^{[1
]}

Dapor, Maurizio ^{[2
]}

Fichtner, Wolfgang ^{[1
]}

机构：

[1] ETH Zentrum, Swiss Fed Inst Technol ETH, Integrated Syst Lab, CH-8092 Zurich, Switzerland

[2] FBK IRST, Ctr Mat & Microsyst, Trento, Italy

来源：

MICROELECTRONICS RELIABILITY | 2010年 / 50卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2010.07.120

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Modeling of critical dimensions scanning electron microscopy with sub-nanometer uncertainty is required to provide a metrics and to avoid yield loss in the processing of advanced CMOS technologies. In this paper, a new approach is proposed, which includes a new Monte Carlo scheme, a new Monte Carlo code, as well as the coupling with electrostatic fields to take into account self-charging effects. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1407 / 1412

页数：6

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