Simulation of the Measurement by Scanning Electron Microscopy of Edge and Linewidth Roughness Parameters in Nanostructures

被引：0
|
作者：
Ciappa, Mauro [1 ]
Ilgunsatiroglu, Emre [1 ]
Illarionov, Alexey Yu. [1 ]
机构：
[1] Swiss Fed Inst Technol, Integrated Syst Lab, Zurich, Switzerland
来源：
2015 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2015年
关键词：
Metrology; Scanning Electron Microscopy; Critical Dimensions; Line Edge Roughness; Monte Carlo Modeling;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Uncertainties in the sub-nanometer range, the use of new materials, roughness, and the three-dimensional structures represent main challenges for the metrology of critical dimensions in nanostructures. In this paper, realistic PMMA lines in the 40nm range are generated by full 3D process simulation and the corresponding secondary electron SEM image is obtained by Monte Carlo simulation. Line Edge and Line Width Roughness parameters are extracted from the simulated SEM image and compared with the parameters obtained from the true geometry.
引用
收藏
页码：205 / 208
页数：4
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