Modeling secondary electron images for linewidth measurement by critical dimension scanning electron microscopy

被引：18
|
作者：
Ciappa, Mauro [1 ]
Koschik, Alexander [1 ]
Dapor, Maurizio [2 ]
Fichtner, Wolfgang [1 ]
机构：
[1] ETH Zentrum, Swiss Fed Inst Technol ETH, Integrated Syst Lab, CH-8092 Zurich, Switzerland
[2] FBK IRST, Ctr Mat & Microsyst, Trento, Italy
来源：
MICROELECTRONICS RELIABILITY | 2010年 / 50卷 / 9-11期
关键词：
D O I：
10.1016/j.microrel.2010.07.120
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Modeling of critical dimensions scanning electron microscopy with sub-nanometer uncertainty is required to provide a metrics and to avoid yield loss in the processing of advanced CMOS technologies. In this paper, a new approach is proposed, which includes a new Monte Carlo scheme, a new Monte Carlo code, as well as the coupling with electrostatic fields to take into account self-charging effects. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1407 / 1412
页数：6
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