Critical dimension measurement in nanometer scale by using scanning probe microscopy

被引：31

作者：

Nagase, M

Namatsu, H

Kurihara, K

Makino, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1996年 / 35卷 / 07期

关键词：

scanning probe microscopy; Si nano-structure; critical dimension measurement; metrological method; electron beam lithography; anisotropic wet etching; rectangular cross-section;

D O I：

10.1143/JJAP.35.4166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper describes and demonstrates a new method using scanning probe microscopy for nanometer-order measurements of critical dimensions. The modeling equation, which includes the critical dimensions of both the sample and the probe, is derived from a mathematical relationship between the sample, probe, and image. The dimensions, which are the fitting parameters of the modeling equation, can be calculated from the height dependence of apparent width in SPM images. The feasibility of this method was confirmed by measuring several structures fabricated by nanofabrication.

引用

页码：4166 / 4174

页数：9

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