Photovoltage properties of semiconductor LB films on n-Si substrate in contact with metal electrode

被引：6
|
作者：
Komolov, A
Schaumburg, K
Monakhov, V
机构：
[1] Univ Copenhagen, Dept Chem, CISMI, DK-2100 Copenhagen, Denmark
[2] St Petersburg State Univ, Fac Phys, Phys Res Inst, St Petersburg, Russia
来源：
THIN SOLID FILMS | 1997年 / 311卷 / 1-2期
关键词：
interfaces; Langmuir-Blodgett films (LB films); photovoltage; semiconductors;
D O I：
10.1016/S0040-6090(97)00446-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photovoltage properties of multilayer Langmuir-Blodgett (LB) films of corbathiene (similar to 100 nm thick) on the n-Si substrate with semitransparent top gold electrode have been investigated. Measurements of photovoltage dependence on wavelength and intensity of exciting light have been performed. The photovoltage values attaining 0.4 V are well reproducible when subjected to illumination of intensity up to 10(14) photons cm(-2) s(-1) in the wavelength range 300-900 nm. The results are related to the major role of the film/substrate interface and to the films optical absorption features. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：259 / 261
页数：3
相关论文
共 50 条
  • [41] Double-peaked decay of transient photovoltage in nanoporous ZnO/n-Si photodetector
    LIU Hao
    FU Cheng
    ZHAO Kun
    Science China(Physics,Mechanics & Astronomy), 2014, Mechanics & Astronomy)2014 (06) : 1206 - 1208
  • [42] Electrical properties of Al/PTB7-Th/n-Si metal-polymer-semiconductor Schottky barrier diode
    Lim, Lih Wei
    Aziz, Fakhra
    Muhammad, Fahmi F.
    Supangat, Azzuliani
    Sulaiman, Khaulah
    SYNTHETIC METALS, 2016, 221 : 169 - 175
  • [43] Double-peaked decay of transient photovoltage in nanoporous ZnO/n-Si photodetector
    Hao Liu
    Cheng Fu
    Kun Zhao
    Science China Physics, Mechanics & Astronomy, 2014, 57 : 1206 - 1208
  • [44] GaN Thin Films Deposited on n-Si (111) Substrate with a Metal Organic Chemical Vapor Deposition System for Sensing Ultraviolet Light
    Chou, Tse-Heng
    SENSORS AND MATERIALS, 2016, 28 (06) : 689 - 694
  • [45] Characterizing and understanding the photovoltage in n-Si/Au light-addressable electrochemical sensors
    Hussain, Armeen
    Mancini, Kayla
    Khatib, Yousef
    O'Neil, Glen D.
    ANALYST, 2024, 149 (14) : 3716 - 3720
  • [46] Double-peaked decay of transient photovoltage in nanoporous ZnO/n-Si photodetector
    Liu Hao
    Fu Cheng
    Zhao Kun
    SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2014, 57 (06) : 1206 - 1208
  • [47] GaN thin films deposited on n-Si (111) substrate with a metal organic chemical vapor deposition system for sensing ultraviolet light
    Chou T.-H.
    Chou, Tse-Heng (thchou@wfu.edu.tw), 1600, M Y U Scientific Publishing Division (28): : 689 - 694
  • [48] Hot-electron transport properties of CoFe/n-Si and CoFe/Cu/n-Si junctions
    Tang, Xiao-Li
    Zhang, Huai-Wu
    Su, Hua
    Zhong, Zhi-Yong
    Jing, Yu-Lan
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (09): : 3004 - 3008
  • [49] Electrodeposition of ZnO thin films on n-Si(100)
    Dalchiele, EA
    Giorgi, P
    Marotti, RE
    Martín, F
    Ramos-Barrado, JR
    Ayouci, R
    Leinen, D
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 70 (03) : 245 - 254
  • [50] SNO2-F/N-SI AND IN2O3-SN/N-SI SEMICONDUCTOR-INSULATOR SEMICONDUCTOR SOLAR-CELLS
    SINGH, SP
    SAXENA, AK
    TIWARI, LM
    AGNIHOTRI, OP
    THIN SOLID FILMS, 1985, 127 (1-2) : 77 - 84
12345