Photovoltage properties of semiconductor LB films on n-Si substrate in contact with metal electrode

被引：6
|
作者：
Komolov, A
Schaumburg, K
Monakhov, V
机构：
[1] Univ Copenhagen, Dept Chem, CISMI, DK-2100 Copenhagen, Denmark
[2] St Petersburg State Univ, Fac Phys, Phys Res Inst, St Petersburg, Russia
来源：
THIN SOLID FILMS | 1997年 / 311卷 / 1-2期
关键词：
interfaces; Langmuir-Blodgett films (LB films); photovoltage; semiconductors;
D O I：
10.1016/S0040-6090(97)00446-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photovoltage properties of multilayer Langmuir-Blodgett (LB) films of corbathiene (similar to 100 nm thick) on the n-Si substrate with semitransparent top gold electrode have been investigated. Measurements of photovoltage dependence on wavelength and intensity of exciting light have been performed. The photovoltage values attaining 0.4 V are well reproducible when subjected to illumination of intensity up to 10(14) photons cm(-2) s(-1) in the wavelength range 300-900 nm. The results are related to the major role of the film/substrate interface and to the films optical absorption features. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：259 / 261
页数：3
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