The post-annealing environment effect on the photoluminescence recovery of ion-irradiated Si nanocrystals

In the present work we have investigated the influence of the post-annealing environment on the photoluminescence (PL) recovery of Si nanocrystals after ion irradiation. Samples originally produced by Si implantation into SiO2 matrix at 600 degrees C post-annealed at 1100 degrees C were further bombarded with 2 MeV Si+, at a fluence of Phi = 2 x 10(13) Si/cm(2). After irradiation the original emission, composed by two PL bands, was completely quenched. We shown that the environment of a post-annealing performed at 900 degrees C has a strong effect on the PL emission recovery. The intensity and shape of the PL spectra have revealed to be dependent of the annealing gas (N-2 or Ar), annealing time, as well as the original Si excess. The results are explained on the basis of current theories. (c) D 2006 Elsevier B.V. All rights reserved.