Behavior of Nitrogen in Si Crystal during Irradiation and Post-annealing

Radiation induced complexes in nitrogen (N) -doped silicon crystal was investigated by highly sensitive infrared absorption spectroscopy. The absorption by N-2 pair was reduced by the electron irradiation in FZ crystals. The absorptions appeared on both sides of N-2 line at 766 cm(-1), at about 725 and 778 cm(-1). By the annealing, N-2 lines recovered a little at 600 degrees C and mostly at 800 degrees C. The above new absorption lines reduced by the annealing at lower temperatures and other absorption appeared. In CZ silicon, N-2 lines did not change by the irradiation. Dominant absorption in low carbon FZ silicon was that of C-rich type complexes, VO and InCiOim(n=0-3, m=0,1). Dominant absorption in the irradiated low carbon CZ silicon was that of C-lean type complexes InO2+mi(n=1, 2, m=0, 1), and the decrease of C-lean type O-2i and TDD was observed. By the annealing of CZ Si, VOn (n=2-4) formation and annihilation was observed.