A New Unified Model for Channel Thermal Noise of Deep Sub-micron RFCMOSC

被引：2
|
作者：
Ong, S. N. [1 ,2 ]
Chew, K. W. J. [2 ]
Yeo, K. S. [1 ]
Chan, L. H. K. [1 ]
Loo, X. S. [1 ,2 ]
Boon, C. C. [1 ]
Do, M. A. [1 ]
机构：
[1] Nanyang Technol Univ, 50 Nanyang Ave, Singapore 639798, Singapore
[2] Chartered Semicond Mfg Ltd, Singapore 738406, Turkey
来源：
2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY: SYNERGY OF RF AND IC TECHNOLOGIES, PROCEEDINGS | 2009年
关键词：
Channel thermal noise; high-frequency noise modeling; mobility degradation; MOSFET; noise of deep sub-micron MOSFET; vertical electric field; MOSFETS; DESIGN;
D O I：
10.1109/RFIT.2009.5383701
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a 0.13 mu m RFCMOS technology process are compared to the channel noise directly extracted from RF noise measurements.
引用
收藏
页码：280 / 283
页数：4
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