Electric-Field Enhancement of a Gate-All-Around Nanowire Thin-Film Transistor Memory

被引：35
|
作者：
Huang, Po-Chun [1 ]
Chen, Lu-An [2 ]
Sheu, Jeng-Tzong [2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30050, Taiwan
[2] Natl Chiao Tung Univ, Inst Nanotechnol, Hsinchu 30050, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 03期
关键词：
Field enhancement; gate-all-around (GAA); gate injection; nanowire (NW); SONOS; thin-film transistor (TFT); POLY-SI;
D O I：
10.1109/LED.2009.2038177
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-performance gate-all-around (GAA) poly-Si nanowire (NW) SONOS-type memory thin-film transistor (TFT) is presented. The presence of the corners of the GAA structure resulted in the program speed and memory window of this device being superior to those of a planar poly-Si TFT device. When erasing, planar devices exhibit a threshold-voltage shift resulting from gate injection; the GAA device was immune to this behavior. The presence of a nonuniform electric field in the channel region during programming and erasing was confirmed through simulation. The device also exhibited superior endurance and data-retention behavior.
引用
收藏
页码：216 / 218
页数：3
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