Novel Gate-All-Around High-Voltage Thin-Film Transistor With T-Shaped Metal Field Plate Design

被引：2
|
作者：
Tsai, Jhen-Yu [1 ]
Hu, Hsin-Hui [1 ]
机构：
[1] Natl Taipei Univ Technol, Dept Elect Engn, Taipei 10607, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 03期
关键词：
Gate-all-around (GAA); high-voltage thin-film transistor (HVTFT); metal field plate (MFP); POLY-SI TFT; DUMMY-GATE; BREAKDOWN; LDMOS;
D O I：
10.1109/TED.2015.2395878
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel gate-all-around (GAA) high-voltage thin-film transistor (HVTFT) with the T-shaped metal field plate (MFP) design results in a high breakdown voltage (V-BD) of 119.9 V and a low specific ON-resistance (R-SP) of 8.4 m Omega . cm(2). This T-shaped MFP GAA HVTFT solves the V-BD-R-SP tradeoff problems and exhibits superior gate control performance, which leads to excellent electrical characteristics such as a better ON/OFF ratio of >10(10) and a lower subthreshold slope of 154.4 mV/decade than the conventional planar structure.
引用
收藏
页码：882 / 887
页数：6
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