Ga vacancies in low-temperature-grown GaAs identified by slow positrons

被引：59
|
作者：
Gebauer, J [1 ]
KrauseRehberg, R [1 ]
Eichler, S [1 ]
Luysberg, M [1 ]
Sohn, H [1 ]
Weber, ER [1 ]
机构：
[1] UNIV CALIF BERKELEY,DEPT MAT SCI,BERKELEY,CA 94720
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 05期
关键词：
D O I：
10.1063/1.119814
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A systematic investigation of GaAs layers grown at low temperatures was carried out by means of positron annihilation. The vacancy defects in undoped as-grown material were identified to be mainly Ga vacancies (V-Ga) by comparing the annihilation parameters to those of Ca vacancies in highly Si-doped GaAs. The characteristic S parameter for positron annihilation in Ga vacancies was determined to be S(V-Ga) = 1.024(1). The V-Ga concentration increases up to 10(18) cm(-3) by decreasing the growth temperature to 200 degrees C. The vacancy concentration can account for the compensation of As-Ga(+) antisites as was previously assumed. (C) 1997 American Institute of Physics.
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页码：638 / 640
页数：3
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