GaN epilayers and AlGaN/GaN multiple quantum wells grown on freestanding [1(1)over-bar-00] oriented GaN substrates

被引：0

作者：

Chen, CQ ^{[1
]}

Gaevski, ME ^{[1
]}

Sun, WH ^{[1
]}

Kuokstis, E ^{[1
]}

Yang, JW ^{[1
]}

Simin, G ^{[1
]}

Khan, MA ^{[1
]}

Maruska, HP ^{[1
]}

Hill, DW ^{[1
]}

Chou, MMC ^{[1
]}

Gallagher, JJ ^{[1
]}

Chai, BH ^{[1
]}

Song, JH ^{[1
]}

Ryu, MY ^{[1
]}

Yu, PW ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

GAN AND RELATED ALLOYS-2002 | 2003年 / 743卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the homoepitaxial growth of GaN on freestanding [1 (1) over bar 00] oriented GaN substrates using metalorganic chemical vapor deposition. A proper pretreatment of the substrates was found to be essential for the GaN homoepitaxy. The influence of growth conditions such as V/III molar-ratio and temperature on the surface morphology and optical properties of epilayers was investigated. Optimized pretreatment and growth conditions led to high quality [1 (1) over bar 00] oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Based on these GaN epilayer, AlGaN/GaN multiple quantum wells have been grown on the freestanding M-plane GaN. Photoluminescence data confirm that built-in electric field for M-plane structures is very weak, and this situation results in a stronger PL intensity in comparison with C-plane multiple quantum wells in tests at low excitation level.

引用

页码：299 / 304

页数：6

共 50 条

[31] Fabrication of InGaN/GaN multiple quantum wells on (1-101) GaN
Tanikawa, Tomoyuki
Sano, Tomotaka
Kushimoto, Maki
Honda, Yoshio
Yamaguchi, Masahito
Amano, Hiroshi
Japanese Journal of Applied Physics, 2013, 52 (8 PART 2)
[32] Electroabsorption modulators based on bulk GaN films and GaN/AlGaN multiple quantum wells
Kao, Chen-Kai
Bhattacharyya, Anirban
Thomidis, Christos
Paiella, Roberto
Moustakas, Theodore D.
JOURNAL OF APPLIED PHYSICS, 2011, 109 (08)
[33] Luminescence of highly excited nonpolar α-plane GaN and AlGaN/GaN multiple quantum wells
Jursenas, S
Kuokstis, E
Miasojedovas, S
Kurilcik, G
Zukauskas, A
Chen, CQ
Yang, JW
Adivarahan, V
Khan, MA
ACTA PHYSICA POLONICA A, 2004, 105 (06) : 567 - 573
[34] Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells
Smith, M
Lin, JY
Jiang, HX
Khan, A
Chen, Q
Salvador, A
Botchkarev, A
Kim, W
Morkoc, H
APPLIED PHYSICS LETTERS, 1997, 70 (21) : 2882 - 2884
[35] Role of dislocation in InGaN/GaN quantum wells grown on bulk GaN and sapphire substrates
Sugahara, Tomoya
Sakai, Shiro
IEICE Transactions on Electronics, 2000, E83-C (04) : 598 - 604
[36] Role of dislocation in InGaN/GaN quantum wells grown on bulk GaN and sapphire substrates
Sugahara, T
Sakai, S
IEICE TRANSACTIONS ON ELECTRONICS, 2000, E83C (04): : 598 - 604
[37] Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire
Bubendorff, JL
Grandjean, N
Damilano, B
Troyon, M
JOURNAL OF CRYSTAL GROWTH, 2003, 247 (3-4) : 284 - 290
[38] Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (10(1)over-bar(1)over-bar) GaN templates
Chakraborty, Arpan
Onuma, T.
Baker, T. J.
Keller, S.
Chichibu, S. F.
DenBaars, S. P.
Nakamura, S.
Speck, J. S.
Mishra, U. K.
PROGRESS IN SEMICONDUCTOR MATERIALS V-NOVEL MATERIALS AND ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2006, 891 : 231 - +
[39] AlGaN/GaN multiple quantum wells grown on facet-controlled epitaxial lateral overgrown GaN/sapphire templates
Zhou, H. L.
Chua, S. J.
Tripathy, S.
Yakovlev, N. L.
Wang, L. S.
Liu, W.
JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (05)
[40] Interface structure and epitaxial growth of M-plane GaN(1(1)over-bar-00) on tetragonal LiAlO2(100) substrates
Trampert, A
Liu, T
Waltereit, P
Brandt, O
Ploog, KH
MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, 2001, (169): : 277 - 280

← 1 2 3 4 5 →