GaN epilayers and AlGaN/GaN multiple quantum wells grown on freestanding [1(1)over-bar-00] oriented GaN substrates

被引：0

作者：

Chen, CQ ^{[1
]}

Gaevski, ME ^{[1
]}

Sun, WH ^{[1
]}

Kuokstis, E ^{[1
]}

Yang, JW ^{[1
]}

Simin, G ^{[1
]}

Khan, MA ^{[1
]}

Maruska, HP ^{[1
]}

Hill, DW ^{[1
]}

Chou, MMC ^{[1
]}

Gallagher, JJ ^{[1
]}

Chai, BH ^{[1
]}

Song, JH ^{[1
]}

Ryu, MY ^{[1
]}

Yu, PW ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

GAN AND RELATED ALLOYS-2002 | 2003年 / 743卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the homoepitaxial growth of GaN on freestanding [1 (1) over bar 00] oriented GaN substrates using metalorganic chemical vapor deposition. A proper pretreatment of the substrates was found to be essential for the GaN homoepitaxy. The influence of growth conditions such as V/III molar-ratio and temperature on the surface morphology and optical properties of epilayers was investigated. Optimized pretreatment and growth conditions led to high quality [1 (1) over bar 00] oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Based on these GaN epilayer, AlGaN/GaN multiple quantum wells have been grown on the freestanding M-plane GaN. Photoluminescence data confirm that built-in electric field for M-plane structures is very weak, and this situation results in a stronger PL intensity in comparison with C-plane multiple quantum wells in tests at low excitation level.

引用

页码：299 / 304

页数：6

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