Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

被引：110
|
作者：
Cao, Rongrong [1 ]
Song, Bing [1 ]
Shang, D. S. [2 ,3 ]
Yang, Yang [2 ,3 ]
Luo, Qing [2 ,3 ]
Wu, Shuyu [2 ,3 ]
Li, Yue [2 ,3 ]
Wang, Yan [2 ,3 ]
Lv, Hangbing [2 ,3 ]
Liu, Qi [2 ,3 ]
Liu, Ming [2 ,3 ]
机构：
[1] Natl Univ Def Technol, Coll Elect Sci & Engn, Changsha 410073, Hunan, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 11期
基金：
中国国家自然科学基金;
关键词：
Ru/HZO/Ru; leakage current; breakdown field; endurance property; THIN-FILMS; MEMORY;
D O I：
10.1109/LED.2019.2944960
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, the endurance property of Hf0.5Zr0.5O2(HZO) based ferroelectric capacitor has been improved using Ru electrodes. Compared to the widely used TiN/HZO/TiN capacitor, the Ru/HZO/Ru capacitor shows comparable remnant polarization (similar to 20 mu C/cm(2)), lower leakage current (5.67x10(-5)A/cm(2)) and higher breakdown electric field (similar to 4 MV/cm) at room temperature. The reduction of the leakage current and the enhancement of the breakdown electric field, which are ascribed to the small number of defects and vacancies in HZO thin films with Ru electrodes, prompt the endurance improvement of HZO-based capacitor from 3 x 10(10) cycles for TiN electrodes at 3 MV/cm to more than 1.2 x 10(11) cycles for Ru electrodes at 3.5 MV/cm. This work provides an effective way to reduce the leakage current and improve the endurance property of HZO-based capacitors.
引用
收藏
页码：1744 / 1747
页数：4
相关论文
共 50 条
  • [11] Influence of antiferroelectric-like behavior on tuning properties of ferroelectric HZO-based varactors
    Abdulazhanov, Sukhrob
    Lederer, Maximilian
    Lehninger, David
    Ali, Tarek
    Emara, Jennifer
    Olivo, Ricardo
    Kaempfe, Thomas
    MRS ADVANCES, 2021, 6 (21) : 530 - 534
  • [12] Physical modeling of HZO-based ferroelectric field-effect transistors with a WOx channel
    Wen, Xin
    Halter, Mattia
    Begon-Lours, Laura
    Luisier, Mathieu
    FRONTIERS IN NANOTECHNOLOGY, 2022, 4
  • [13] Improved Crossbar Array Architecture for Compensating Interconnection Resistance: Ferroelectric HZO-Based Synapse Case
    Tang, Mingfeng
    Zhan, Xuepeng
    Chen, Jiezhi
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2022, 10 : 192 - 196
  • [14] Low Operating Voltage and Immediate Read-After-Write of HZO-Based Si Ferroelectric Field-Effect Transistors with High Endurance and Retention Characteristics
    Kim, Bong Ho
    Kuk, Song-Hyeon
    Kim, Seong Kwang
    Kim, Joon Pyo
    Suh, Yoon-Je
    Jeong, Jaeyong
    Lee, Chan Jik
    Geum, Dae-Myeong
    Yoon, Young Joon
    Kim, Sang Hyeon
    ADVANCED ELECTRONIC MATERIALS, 2024, 10 (01)
  • [15] BEOL-Compatible Ferroelectric Capacitor of 5 nm Ultrathin HZO With High Remanent Polarization and Excellent Endurance
    Teng, Li-Cheng
    Huang, Yu-Che
    Chang, Shu-Jui
    Wang, Shin-Yuan
    Lin, Yu-Hsien
    Chien, Chao-Hsin
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2024, 23 : 474 - 477
  • [16] La Doped HZO-Based 3D-Trench Metal-Ferroelectric-Metal Capacitors With High-Endurance (>1012) for FeRAM Applications
    Walke, Amey M.
    Popovici, Mihaela I.
    Sharifi, Shamin H.
    Demir, Eyup C.
    Puliyalil, Harinarayanan
    Bizindavyi, Jasper
    Yasin, Farrukh
    Clima, Sergiu
    Fantini, Andrea
    Belmonte, Attilio
    Kar, Gouri S.
    Houdt, Jan V.
    IEEE ELECTRON DEVICE LETTERS, 2024, 45 (04) : 578 - 581
  • [17] Stabilizing Remanent Polarization during Cycling in HZO-Based Ferroelectric Device by Prolonging Wake-up Period
    Jiang, Pengfei
    Wei, Wei
    Yang, Yang
    Wang, Yuan
    Xu, Yannan
    Tai, Lu
    Yuan, Peng
    Chen, Yuting
    Gao, Zhaomeng
    Gong, Tiancheng
    Ding, Yaxin
    Lv, Shuxian
    Dang, Zhiwei
    Wang, Yan
    Yang, Jianguo
    Luo, Qing
    Liu, Ming
    ADVANCED ELECTRONIC MATERIALS, 2022, 8 (08)
  • [18] Interrelation between ferroelectric properties and defects based on low-frequency noise analysis of HZO ferroelectric capacitor
    Jin, Seunghee
    Jeon, Juye
    Kim, Min Jung
    Heo, Kiseok
    Kim, Jeong Hun
    Im, Jong-Pil
    Yoon, Sung-Min
    Moon, Seung Eon
    Woo, Jiyong
    Lee, Jae Woo
    APPLIED PHYSICS LETTERS, 2023, 122 (16)
  • [19] Degradation mechanism differences between TiN- and TaN-electrode HZO-based FeRAMs analyzed by current mechanism fitting
    Yeh, Yu-Hsuan
    Chen, Wen-Chung
    Chang, Ting-Chang
    Tan, Yung-Fang
    Wu, Chung-Wei
    Zhang, Yong-Ci
    Lee, Ya-Huan
    Lin, Chao Cheng
    Huang, Hui-Chun
    Sze, Simon M.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 38 (08)
  • [20] 50-fold endurance improvement in HfO2-based ferroelectric capacitor through hybrid recovery schemes
    Tang, Zhuohua
    Yang, Wanwang
    Song, Xujin
    Zhu, Haotong
    Tang, Nan
    Yang, Haozhang
    Feng, Yulin
    Zhou, Zheng
    Kang, Jinfeng
    Huang, Peng
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2025, 64 (03)
12345