Ultrathin MXene-Micropattern-Based Field-Effect Transistor for Probing Neural Activity

被引:515
|
作者
Xu, Bingzhe [1 ]
Zhu, Minshen [2 ]
Zhang, Wencong [1 ]
Zhen, Xu [1 ]
Pei, Zengxia [2 ]
Xue, Qi [2 ]
Zhi, Chunyi [2 ]
Shi, Peng [1 ,3 ]
机构
[1] City Univ Hong Kong, Dept Mech & Biomed Engn, 83 Tat Chee Ave, Kowloon 999077, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, 83 Tat Chee Ave, Kowloon 999077, Hong Kong, Peoples R China
[3] City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
基金
中国国家自然科学基金;
关键词
SELECTIVE DETECTION; ELECTROCHEMICAL SENSOR; ASCORBIC-ACID; TI3C2; MXENE; GRAPHENE; DOPAMINE; LI; ANODE; HEMOGLOBIN; BIOSENSOR;
D O I
10.1002/adma.201504657
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A field-effect transistor (FET) based on ultrathin Ti3C2-MXene micropatterns is developed and utilized as a highly sensitive biosensor. The device is produced with the microcontact printing technique, making use of its unique advantages for easy fabrication. Using the MXene-FET device, label-free probing of small molecules in typical biological environments and fast detection of action potentials in primary neurons is demonstrated.
引用
收藏
页码:3333 / 3339
页数:7
相关论文
共 50 条
  • [21] A MAGNETIC FIELD-EFFECT TRANSISTOR
    MANNHART, J
    HUEBENER, RP
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1829 - 1831
  • [22] UNIPOLAR FIELD-EFFECT TRANSISTOR
    DACEY, GC
    ROSS, IM
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (08): : 970 - 979
  • [23] A UNIPOLAR FIELD-EFFECT TRANSISTOR
    SHOCKLEY, W
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376
  • [24] AMBIPOLAR FIELD-EFFECT TRANSISTOR
    PFLEIDERER, H
    KUSIAN, W
    SOLID-STATE ELECTRONICS, 1986, 29 (03) : 317 - 319
  • [25] SILICON FIELD-EFFECT TRANSISTOR BASED ON QUANTUM TUNNELING
    TUCKER, JR
    WANG, CL
    CARNEY, PS
    APPLIED PHYSICS LETTERS, 1994, 65 (05) : 618 - 620
  • [26] A potentiometric immunosensor based on a ZnO field-effect transistor
    Koike, Kazuto
    Mukai, Kazuya
    Onaka, Takayuki
    Maemoto, Toshihiko
    Sasa, Shigehiko
    Yano, Mitsuaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (05)
  • [27] Field-effect transistor memories based on ferroelectric polymers
    Yujia Zhang
    Haiyang Wang
    Lei Zhang
    Xiaomeng Chen
    Yu Guo
    Huabin Sun
    Yun Li
    Journal of Semiconductors, 2017, 38 (11) : 5 - 18
  • [28] Field-effect transistor based on ZnO:Li films
    Hovsepyan, R. B.
    Aghamalyan, N. R.
    Petrosyan, S. I.
    JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES, 2010, 45 (06) : 262 - 268
  • [29] Ferroelectric field-effect transistor based on transparent oxides
    Titkov, Ilya
    Pronin, Igor
    Delimova, Lubov
    Liniichuk, Ivan
    Grekhov, Igor
    THIN SOLID FILMS, 2007, 515 (24) : 8748 - 8751
  • [30] Field-effect transistor based on organosoluble germanium nanoclusters
    Watanabe, A
    Hojo, F
    Miwa, T
    APPLIED ORGANOMETALLIC CHEMISTRY, 2005, 19 (04) : 530 - 537