Anisotropic Magnetoresistance of GaMnAs Ferromagnetic Semiconductors

被引：3

作者：

Vasek, P. ^{[1
]}

Svoboda, P. ^{[1
]}

Novak, V. ^{[1
]}

Cukr, M. ^{[1
]}

Vyborny, Z. ^{[1
]}

Jurka, V. ^{[1
]}

Stuchlik, J. ^{[1
]}

Orlita, M. ^{[2
]}

Maude, D. K. ^{[2
]}

机构：

[1] Inst Phys ASCR, Vvi, Prague, Czech Republic

[2] CNRS, Grenoble High Magnet Field Lab, Grenoble, France

来源：

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2010年 / 23卷 / 06期

关键词：

GaMnAs; Anisotropic magnetoresistance; Hydrogenation;

D O I：

10.1007/s10948-010-0664-5

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The angular dependence of the magnetoresistance has been studied for two sets of samples: annealed and hydrogenated, respectively. Different behavior of magnetoresistance anisotropy has been discussed in terms of change of scattering rate and/or introduction of strain during treatment.

引用

页码：1161 / 1163

页数：3

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