Anisotropic magnetoresistance of ferromagnetic conductive filament in resistive switching memory

被引：0
|
作者：
Otsuka, S. [1 ]
Hamada, Y. [1 ]
Shimizu, T. [1 ]
Shingubara, S. [1 ]
机构：
[1] Kansai Univ, Grad Sch Sci & Engn, Osaka 5648680, Japan
来源：
NONVOLATILE MEMORIES 3 | 2014年 / 64卷 / 14期
关键词：
D O I：
10.1149/06414.0029ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We report on an origin of the conductive filament (CF) for a Ni/HfO2/Pt resistive switching memory. The device shows SET process (from high to low resistance), when positive bias is applied to the Ni electrode. RESET process (from low to high resistance) occurs during both positive and negative biases. We investigated the temperature dependence of resistance and magnetoresistance for the low resistance states (LRS) of the device, which were formed with different amount of a current compliance. LRS formed with the high current compliance has a linear temperature dependence of resistance compared with that formed with the low current compliance. Moreover, anisotropic magnetoresistance was observed for the LRS, which was formed with the high current compliance. This suggests that CF is made of the ferromagnetic Ni atoms when a high current compliance was used to form LRS.
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页码：27 / 33
页数：7
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