Anisotropic Magnetoresistance of GaMnAs Ferromagnetic Semiconductors

被引：3
|
作者：
Vasek, P. [1 ]
Svoboda, P. [1 ]
Novak, V. [1 ]
Cukr, M. [1 ]
Vyborny, Z. [1 ]
Jurka, V. [1 ]
Stuchlik, J. [1 ]
Orlita, M. [2 ]
Maude, D. K. [2 ]
机构：
[1] Inst Phys ASCR, Vvi, Prague, Czech Republic
[2] CNRS, Grenoble High Magnet Field Lab, Grenoble, France
来源：
JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2010年 / 23卷 / 06期
关键词：
GaMnAs; Anisotropic magnetoresistance; Hydrogenation;
D O I：
10.1007/s10948-010-0664-5
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The angular dependence of the magnetoresistance has been studied for two sets of samples: annealed and hydrogenated, respectively. Different behavior of magnetoresistance anisotropy has been discussed in terms of change of scattering rate and/or introduction of strain during treatment.
引用
收藏
页码：1161 / 1163
页数：3
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