Anisotropic Magnetoresistance of GaMnAs Ferromagnetic Semiconductors

被引：0
|
作者：
P. Vašek
P. Svoboda
V. Novák
M. Cukr
Z. Výborný
V. Jurka
J. Stuchlík
M. Orlita
D. K. Maude
机构：
[1] Institute of Physics ASCR,Grenoble High Magnet Field Lab
[2] CNRS,undefined
来源：
Journal of Superconductivity and Novel Magnetism | 2010年 / 23卷
关键词：
GaMnAs; Anisotropic magnetoresistance; Hydrogenation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The angular dependence of the magnetoresistance has been studied for two sets of samples: annealed and hydrogenated, respectively. Different behavior of magnetoresistance anisotropy has been discussed in terms of change of scattering rate and/or introduction of strain during treatment.
引用
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页码：1161 / 1163
页数：2
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