Heteroepitaxy of CoSi2 on patterned Si(100) substrates

被引:0
|
作者
Karpenko, OP [1 ]
Eaglesham, DJ [1 ]
Yalisove, SM [1 ]
机构
[1] UNIV MICHIGAN,DEPT MAT SCI & ENGN,ANN ARBOR,MI 48109
关键词
D O I
暂无
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:481 / 486
页数:6
相关论文
共 50 条
  • [31] FORMATION OF EPITAXIAL SI/COSI2,/SI(100) HETEROSTRUCTURES USING ALLOTAXY
    MANTL, S
    MICHEL, I
    GUGGI, D
    BAY, HL
    MESTERS, S
    APPLIED SURFACE SCIENCE, 1993, 73 : 102 - 107
  • [32] CoSi2 on Si(100): LEED investigations of the c(2 × 2) and (2√2 × √2) phases and comparison to a bulk crystal CoSi2(100) surface
    Starke, U.
    Weiss, W.
    Rangelov, G.
    Fauster, Th.
    Castro, G.R.
    Heinz, K.
    Surface Science, 1996, 352-354 : 89 - 93
  • [33] Texture of CoSi2 films on Si(111), (110) and (001) substrates
    De Keyser, K.
    Detavernier, C.
    Jordan-Sweet, J.
    Lavoie, C.
    THIN SOLID FILMS, 2010, 519 (04) : 1277 - 1284
  • [34] GROWTH OF EPITAXIAL COSI2, ON SI(100) USING SI(100)/TI/CO BILAYERS
    VANTOMME, A
    NICOLET, MA
    BAI, G
    FRASER, DB
    APPLIED SURFACE SCIENCE, 1993, 73 : 117 - 123
  • [35] HETEROEPITAXY OF GE ON (100) SI SUBSTRATES
    BARIBEAU, JM
    JACKMAN, TE
    MAIGNE, P
    HOUGHTON, DC
    DENHOFF, MW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1898 - 1902
  • [36] FORMATION OF EPITAXIAL COSI2 ON SI(100) - ROLE OF THE ANNEALING AMBIENT
    VANTOMME, A
    NICOLET, MA
    BAI, G
    FRASER, DB
    APPLIED PHYSICS LETTERS, 1993, 62 (03) : 243 - 245
  • [37] OBSERVATION AND ANALYSIS OF EPITAXIAL-GROWTH OF COSI2 ON (100) SI
    BULLELIEUWMA, CWT
    VANOMMEN, AH
    HORNSTRA, J
    AUSSEMS, CNAM
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (05) : 2211 - 2224
  • [38] FORMATION OF THIN-FILMS OF MONOCRYSTALLINE COSI2 ON (100) SI
    MAEX, K
    BRIJS, G
    VANHELLEMONT, J
    VANDERVORST, W
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 660 - 665
  • [39] Epitaxial CoSi2 formation by Co/Hf bilayers on Si(100)
    Gebhardt, B
    Falke, M
    Giesler, H
    Teichert, S
    Beddies, G
    Hinneberg, HJ
    MICROELECTRONIC ENGINEERING, 1997, 37-8 (1-4) : 483 - 490
  • [40] Nanometer patterning of epitaxial CoSi2/Si(100) by local oxidation
    Zhao, QT
    Dolle, M
    Kappius, L
    Klinkhammer, F
    Mesters, S
    Mantl, S
    SOLID-STATE ELECTRONICS, 1999, 43 (06) : 1091 - 1094