Carbon nanotube junctions obtained by pulsed liquid injection chemical vapour deposition

被引：6
|
作者：
Garcia, A. G. [1 ]
Duarte Correa, M. J. [1 ]
Perez Robles, J. F. [1 ]
Romero, A. H. [1 ]
Velasco-Santos, C. [2 ,3 ]
Apatiga, L. M. [2 ]
机构：
[1] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Queretaro 76230, Mexico
[2] UNAM, Ctr Fis Aplicada & Tecnol Avanzada, Queretaro 76000, Mexico
[3] Inst Tecnol Queretaro, Queretaro 76000, Mexico
来源：
DIAMOND AND RELATED MATERIALS | 2010年 / 19卷 / 7-9期
关键词：
CNT junctions; CNT growth mechanism; PLICVD; RAMAN-SPECTROSCOPY;
D O I：
10.1016/j.diamond.2010.02.034
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of substrate surface roughness on the synthesis of carbon nanotube (CNT) junctions is studied. CNTs were obtained by a pulsed liquid injection chemical vapour deposition system (PLICVD) and grown on quartz substrates with different roughnesses. Nickel particles were used as catalyst and acetone as the carbon precursor. Results shown that CNTs growth depend strongly on the substrate irregularity. When roughness is present, the presence of CNT junctions are increased. On the quartz surface, without any modification of roughness, CNTs are not obtained. Thus, a growth mechanism for CNT junctions, based on the substrate roughness is suggested. This method represents an important alternative to produce CNTs for applying them in nanoelectronic devices. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：1052 / 1057
页数：6
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