Formation of Si nanocrystals in thin SiO2 films for memory device applications

被引：7

作者：

Curiel, Mario ^{[1
]}

Petrov, Ivan ^{[2
]}

Nedev, Nicola ^{[1
]}

Nesheva, Diana ^{[3
]}

Sardela, Mauro ^{[2
]}

Murata, Yuya ^{[2
]}

Valdez, Benjamin ^{[1
]}

Manolov, Emil ^{[3
]}

Bineva, Irina ^{[3
]}

机构：

[1] Autonomous Univ Baja California, Inst Engn, Benito Juarez Blvd Esc Calle Normal S-N, Mexicali 21280, Baja California, Mexico

[2] Univ Illinois, Ctr Microanal Mat, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[3] Bulgarian Acad Sci, Inst Solid State Phys, B-1784 Sofia, Bulgaria

来源：

ADVANCED ELECTRON MICROSCOPY AND NANOMATERIALS | 2010年 / 644卷

关键词：

SiOx; Si nanocrystals; TEM; AFM; SILICON;

D O I：

10.4028/www.scientific.net/MSF.644.101

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

X-ray Diffraction and Reflectivity, Transmission Electron Microscopy and Atomic Force Microscopy were applied to study the effect of thermal annealing on the properties of thin SiOx films (similar to 15 nm) prepared by thermal evaporation of SiO in vacuum. It has been shown that furnace annealing at 1000 degrees C causes phase separation and formation of uniformly distributed Si nanocrystals into a SiO2 matrix. Clockwise hysteresis has been observed in the C-V curves measured and explained by assuming charging and discharging of the NCs with carriers, which tunnel from the Si substrate.

引用

页码：101 / +

页数：2

共 50 条

[41] Studies on the formation of Si nanocrystals in SiO2 by Ge ion implantation
Giri, PK
Kesavamoorthy, R
Panigrahi, BK
Nair, KGM
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 244 (01): : 56 - 59
[42] Ge nanocrystals in SiO2 films
Kobayashi, T
Endoh, T
Fukuda, H
Nomura, S
Sakai, A
Ueda, Y
APPLIED PHYSICS LETTERS, 1997, 71 (09) : 1195 - 1197
[43] Electron transport through nanocomposite SiO2(Si) films containing Si nanocrystals
Bratus, O. L.
Evtukh, A. A.
Steblova, O., V
Prokopchuk, V. M.
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2016, 19 (01) : 9 - 13
[44] Electron Transport Through Nanocomposite SiO2(Si) Films Containing Si Nanocrystals
Evtukh, A.
Bratus, O.
Steblova, O.
Prokopchuk, V.
2015 IEEE 35TH INTERNATIONAL CONFERENCE ON ELECTRONICS AND NANOTECHNOLOGY (ELNANO), 2015, : 101 - 104
[45] Memory effect in Si nanocrystal embedded SiO2 films
Liu, Y
Chen, TP
Tse, MS
Ho, PF
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 890 - 893
[46] Charge storage peculiarities in poly-Si-SiO2-Si memory devices with Si nanocrystals rich SiO2
Turchanikov, VI
Nazarov, AN
Lysenko, VS
Carreras, J
Garrido, B
MICROELECTRONICS RELIABILITY, 2005, 45 (5-6) : 903 - 906
[47] Emission and optical properties of SiO2/Si thin films
Tashmukhamedova D.A.
Yusupjanova M.B.
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2016, 10 (6) : 1273 - 1275
[48] Crystal microstructure of PbTe/Si and PbTe/SiO2/Si thin films
Ugai, YA
Samoylov, AM
Sharov, MK
Tadeev, AV
THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 : 196 - 200
[49] Crystal microstructure of PbTe/Si and PbTe/SiO2/Si thin films
Ugai, YA
Samoylov, AM
Sharov, MK
Tadeev, AV
THIN SOLID FILMS, 1998, 336 (1-2) : 196 - 200
[50] Modeling of lateral charge transfer in Si nanocrystals in SiO2 thin film
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
不详
Liu, Y. (yliu2008@e.ntu.edu.sg), 1600, American Institute of Physics Inc. (111):

← 1 2 3 4 5 →