Formation of Si nanocrystals in thin SiO2 films for memory device applications

被引：7

作者：

Curiel, Mario ^{[1
]}

Petrov, Ivan ^{[2
]}

Nedev, Nicola ^{[1
]}

Nesheva, Diana ^{[3
]}

Sardela, Mauro ^{[2
]}

Murata, Yuya ^{[2
]}

Valdez, Benjamin ^{[1
]}

Manolov, Emil ^{[3
]}

Bineva, Irina ^{[3
]}

机构：

[1] Autonomous Univ Baja California, Inst Engn, Benito Juarez Blvd Esc Calle Normal S-N, Mexicali 21280, Baja California, Mexico

[2] Univ Illinois, Ctr Microanal Mat, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[3] Bulgarian Acad Sci, Inst Solid State Phys, B-1784 Sofia, Bulgaria

来源：

ADVANCED ELECTRON MICROSCOPY AND NANOMATERIALS | 2010年 / 644卷

关键词：

SiOx; Si nanocrystals; TEM; AFM; SILICON;

D O I：

10.4028/www.scientific.net/MSF.644.101

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

X-ray Diffraction and Reflectivity, Transmission Electron Microscopy and Atomic Force Microscopy were applied to study the effect of thermal annealing on the properties of thin SiOx films (similar to 15 nm) prepared by thermal evaporation of SiO in vacuum. It has been shown that furnace annealing at 1000 degrees C causes phase separation and formation of uniformly distributed Si nanocrystals into a SiO2 matrix. Clockwise hysteresis has been observed in the C-V curves measured and explained by assuming charging and discharging of the NCs with carriers, which tunnel from the Si substrate.

引用

页码：101 / +

页数：2

共 50 条

[31] Reversible charging effects in SiO2 films containing Si nanocrystals
Choi, SH
Elliman, RG
APPLIED PHYSICS LETTERS, 1999, 75 (07) : 968 - 970
[32] Charge Storage Mechanism of Si Nanocrystals Embedded SiO2 Films
Zhang, Wali
Zhang, Sam
Yang, Ming
Chen, Tupei
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2009, 1 (03) : 176 - 181
[33] Photoluminescence from Si nanocrystals embedded in In2O3/SiO2 glass thin films
Matsumoto, Kimihisa
Fujii, Minoru
Hayashi, Shinji
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4A): : 1779 - 1782
[34] Si-nanocrystals/SiO2 thin films obtained by pyrolysis of sol-gel precursors
Das, G.
Ferraioli, L.
Bettotti, P.
De Angelis, F.
Mariotto, G.
Pavesi, L.
Di Fabrizio, E.
Soraru, G. D.
THIN SOLID FILMS, 2008, 516 (20) : 6804 - 6807
[35] Porous SiO2 thin films for ULSI applications
Joshi, Bhavana N.
Mahajan, A. M.
PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, 2007, : 261 - 263
[36] Si implantation in SiO2:: Stucture of Si nanocrystals and composition of SiO2 layer
Levitcharsky, V.
Saint-Jacques, R. G.
Wang, Y. Q.
Nikolova, L.
Smirani, R.
Ross, G. G.
SURFACE & COATINGS TECHNOLOGY, 2007, 201 (19-20): : 8547 - 8551
[37] Preferential growth of Si nanocrystals in SiO2/Si/SiO2 sandwich structure
Du, X. W.
Li, H.
Lu, Y. W.
Sun, J.
JOURNAL OF CRYSTAL GROWTH, 2007, 305 (01) : 59 - 62
[38] Ion irradiation through SiO2/Si interfaces:: Non-conventional fabrication of Si nanocrystals for memory applications
Schmidt, B
Heinig, KH
Röntzsch, L
Müller, T
Stegemann, KH
Votintseva, E
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 242 (1-2): : 146 - 148
[39] Non-volatile memory device based on mobile protons in SiO2 thin films
Vanheusden, K
Warren, WL
Devine, RAB
Fleetwood, DM
Schwank, JR
Shaneyfelt, MR
Winokur, PS
Lemnios, ZJ
NATURE, 1997, 386 (6625) : 587 - 589
[40] Non-volatile memory device based on mobile protons in SiO2 thin films
K. Vanheusden
W. L. Warren
R. A. B. Devine
D. M. Fleetwood
J. R. Schwank
M. R. Shaneyfelt
P. S. Winokur
Z. J. Lemnios
Nature, 1997, 386 : 587 - 589

← 1 2 3 4 5 →