Spin-polarized Carrier Injection Effect in Ferromagnetic Semiconductor/Diffusive Semiconductor/Superconductor Junctions

We study the transport properties of a p-InMnAs/n-InAs/Nb junction where a p-InMnAs can be regarded as a spin injector. Differential conductance of the n-InAs channel is measured as a function of injection current from p-InMnAs or from Nb at 20 mK. A conductance minimum appears at zero-bias voltage with no current injection. As the injection current from p-InMnAs increases, the minimum gradually disappears. This conductance behaviour is very different from that of the injection case from Nb. We also calculate the conductance in the n-InAs channel by taking account of the exchange field in the InAs channel that is induced by InMnAs ferromagnet. The difference between the conductance behaviours on injection current direction can be explained by the inverse proximity effect that the exchange field is also induced in the superconducting electrode.