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Electric injection and detection of spin-polarized electrons in lateral spin valves on ferromagnetic metal-semiconductor InSb heterojunctions

被引：7
|
作者：
Viglin, N. A. [1 ]
Ustinov, V. V. [1 ]
Tsvelikhovskaya, V. M. [1 ]
Pavlov, T. N. [1 ]
机构：
[1] Russian Acad Sci, Inst Met Phys, Ural Branch, Ekaterinburg 620990, Russia
来源：
JETP LETTERS | 2015年 / 101卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
TRANSPORT; CHARGE;
D O I：
10.1134/S0021364015020137
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A lateral spintronic device has been created on the basis of the InSb semiconductor with an iron injector and an iron detector of spin-polarized electrons that are separated from the semiconductor channel by a MgO tunnel barrier. The electric injection and detection of spin-polarized electrons in a single device have been demonstrated. Data on the parameters of the spin subsystem of conduction electrons in the InSb semiconductor and spin polarization of injected electrons in the semiconductor on the Fe/MgO/InSb heterojunction have been obtained from the measurements of the Hanle effect.
引用
收藏
页码：113 / 117
页数：5
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