High-pressure X-ray diffraction study of bulk- and nanocrystalline GaN

被引：9

作者：

Jorgensen, JE

Jakobsen, JM

Jiang, JZ

Gerward, L

Olsen, JS

机构：

[1] Aarhus Univ, Dept Chem, DK-8000 Aarhus C, Denmark

[2] Tech Univ Denmark, Dept Phys, DK-2800 Lyngby, Denmark

[3] Niels Bohr Inst, Oersted lab, DK-2100 Copenhagen, Denmark

来源：

JOURNAL OF APPLIED CRYSTALLOGRAPHY | 2003年 / 36卷 / 03期

关键词：

D O I：

10.1107/S0021889803005375

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Bulk- and nanocrystalline GaN have been studied by high-pressure energy-dispersive X-ray diffraction. Pressure-induced structural phase transitions from the wurtzite to the NaCl phase were observed in both materials. The transition pressure was found to be 40 GPa for the bulk-crystalline GaN, while the wurtzite phase was retained up to 60 GPa in the case of nanocrystalline GaN. The bulk moduli for the wurtzite phases were determined to be 187 ( 7) and 319 ( 10) GPa for the bulk- and nanocrystalline phases, respectively, while the respective NaCl phases were found to have very similar bulk moduli [ 208 ( 28) and 206 ( 44) GPa].

引用

页码：920 / 925

页数：6

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