High-pressure X-ray diffraction study of bulk- and nanocrystalline GaN

被引：9
|
作者：
Jorgensen, JE
Jakobsen, JM
Jiang, JZ
Gerward, L
Olsen, JS
机构：
[1] Aarhus Univ, Dept Chem, DK-8000 Aarhus C, Denmark
[2] Tech Univ Denmark, Dept Phys, DK-2800 Lyngby, Denmark
[3] Niels Bohr Inst, Oersted lab, DK-2100 Copenhagen, Denmark
来源：
JOURNAL OF APPLIED CRYSTALLOGRAPHY | 2003年 / 36卷 / 03期
关键词：
D O I：
10.1107/S0021889803005375
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Bulk- and nanocrystalline GaN have been studied by high-pressure energy-dispersive X-ray diffraction. Pressure-induced structural phase transitions from the wurtzite to the NaCl phase were observed in both materials. The transition pressure was found to be 40 GPa for the bulk-crystalline GaN, while the wurtzite phase was retained up to 60 GPa in the case of nanocrystalline GaN. The bulk moduli for the wurtzite phases were determined to be 187 ( 7) and 319 ( 10) GPa for the bulk- and nanocrystalline phases, respectively, while the respective NaCl phases were found to have very similar bulk moduli [ 208 ( 28) and 206 ( 44) GPa].
引用
收藏
页码：920 / 925
页数：6
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