Deep level study of as-grown and ion implanted bulk and MOCVD grown epitaxial 6H-SiC

Deep level transient spectroscopy measurements from 100 to 800 K were made on nand p-type 6H-SiC implanted with Cr and Mg. Acceptor levels at E(c)-0.236 and E(c)-0.195 eV in n-material have been tentatively assigned to substitutional Or residing at inequivalent (h,k) lattice sites. A Mg specific level has been determined to be located at E(c)-0.510 eV. However, site inequivalencies are not observed for this center possibly indicating an extended defect or complex. P-type implanted material is observed to contain several damage-related deep levels including an intrinsic level at E(v)+0.982 eV, but Cr- or Mg- impurity related hole trap levels were not observed in the lower portion of the band gap.