Deep level study of as-grown and ion implanted bulk and MOCVD grown epitaxial 6H-SiC

被引：0
|
作者：
Scofield, JD [1 ]
Yeo, YK [1 ]
Hengehold, RL [1 ]
机构：
[1] WRIGHT LAB,AEROPROP & POWER DIRECTORATE,WRIGHT PATTERSON AFB,OH
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Deep level transient spectroscopy measurements from 100 to 800 K were made on nand p-type 6H-SiC implanted with Cr and Mg. Acceptor levels at E(c)-0.236 and E(c)-0.195 eV in n-material have been tentatively assigned to substitutional Or residing at inequivalent (h,k) lattice sites. A Mg specific level has been determined to be located at E(c)-0.510 eV. However, site inequivalencies are not observed for this center possibly indicating an extended defect or complex. P-type implanted material is observed to contain several damage-related deep levels including an intrinsic level at E(v)+0.982 eV, but Cr- or Mg- impurity related hole trap levels were not observed in the lower portion of the band gap.
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页码：329 / 332
页数：4
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