Peculiarities of conductivity in structures delta-doped by Si on vicinal (111)A GaAs substrate

被引：0
|
作者：
Kulbachinskii, VA
Galiev, GB
Mokerov, VG
Lunin, RA
Rogozin, VA
Derkach, AV
Vasil'evskii, IS
机构：
[1] Moscow MV Lomonosov State Univ, Fac Phys, Low Temp Phys Dept, Moscow, Russia
[2] Russian Acad Sci, Inst Radioengn & Elect, Moscow, Russia
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
(111)A GaAs surface; anisotropy of conductivity; quantum wires;
D O I：
10.1016/S1386-9477(02)00738-5
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Novel epitaxial structures delta-doped by Si, grown by a MBE method on a vicinal (1 1 1)A substrate misoriented by 0.5degrees, 1.5degrees and 3degrees from the (1 1 1)A GaAs plane towards the [2 (1) over bar (1) over bar] direction were formed. In this way it is possible to obtain 1D channels, or at least, ID periodic modulation of the 2D structure. All samples showed p-type conductivity. It was found that the resistivity of structures R-pa along the steps of vicinal surface is lower than that of R-pe across the steps and depends on temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：172 / 173
页数：2
相关论文
共 50 条
  • [1] PHOTOLUMINESCENCE OF GAAS STRUCTURES DELTA-DOPED WITH SI
    BACHERIKOV, YY
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 131 (01): : 229 - 234
  • [2] Low temperature negative magnetoresistance in the delta-doped by Sn and Si on vicinal and singular substrates GaAs structures
    Kytin, VG
    Kulbachinskii, VA
    Lunin, RA
    Bugaev, AS
    Senichkin, AP
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1996, 46 : 2513 - 2514
  • [3] MIGRATION OF SI IN DELTA-DOPED GAAS
    BEALL, RB
    CLEGG, JB
    HARRIS, JJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) : 612 - 615
  • [4] Theory of Si delta-doped GaAs
    Jones, R
    Oberg, S
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 415 - 419
  • [5] CURRENT-VOLTAGE CHARACTERISTICS OF STRUCTURES WITH GAAS VICINAL FACES DELTA-DOPED WITH TIN
    KADUSHKIN, VI
    KULBACHINSKII, VA
    BOGDANOV, EV
    SENICHKIN, AP
    SEMICONDUCTORS, 1994, 28 (11) : 1042 - 1045
  • [6] PROTON ISOLATION OF SI DELTA-DOPED GAAS
    BILLEN, K
    KELLY, MJ
    LANCEFIELD, D
    GWILLIAM, RM
    RTICHIE, DA
    GYMER, S
    JONES, GAC
    LINFIELD, EH
    CHURCHILL, AP
    ELECTRONICS LETTERS, 1994, 30 (16) : 1359 - 1360
  • [7] MIGRATION OF SI IN DELTA-DOPED MBE GAAS
    BEALL, RB
    HARRIS, JJ
    CLEGG, JB
    GOWERS, JP
    JOYCE, BA
    CASTAGNE, J
    WELCH, V
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 17 - 22
  • [8] MIGRATION OF SI IN DELTA-DOPED MBE GAAS
    BEALL, RB
    HARRIS, JJ
    CLEGG, JB
    GOWERS, JP
    JOYCE, BA
    CASTAGNE, J
    WELCH, V
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 17 - 22
  • [9] EFFECTS OF AS FLUX ON SI DELTA-DOPED GAAS
    SHIH, YCA
    NEIKIRK, DP
    STREETMAN, BG
    MAGEE, CW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 905 - 907
  • [10] Quenching of persistent photoconductivity and decrease of electron concentration by high electric fields in GaAs delta-doped by Sn on vicinal substrate structures
    Kulbachinskii, VA
    Lunin, RA
    Bogdanov, EV
    Kytin, VG
    Senichkin, AP
    PHYSICA B, 1997, 229 (3-4): : 262 - 267
12345