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Determination of Mg concentration and distribution in MgxZn1-xO films for photonic devices application
被引:4
|作者:
Ferlito, E. P.
[1
]
Ricciari, R.
[1
]
Padalino, M.
[1
]
Grasso, S.
[2
]
Battaglia, A.
[3
]
Sciuto, M.
[3
]
Mello, D.
[1
]
Tapfer, L.
[4
]
Gerardi, C.
[1
]
机构:
[1] STMicroelectronics, I-95121 Catania, Italy
[2] STMicroelectronics, Milan, Italy
[3] 3Sun, I-95121 Catania, Italy
[4] ENEA, UTTMATB SS, I-72100 Brindisi, Italy
关键词:
MgxZn1-xO;
ToF-SIMS;
Auger;
XRD;
OPEN-CIRCUIT VOLTAGE;
SOLAR-CELLS;
TOTAL-REFLECTION;
BAND-OFFSET;
X-RAYS;
D O I:
10.1002/sia.5485
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Among the transparent conductor, one of the most interesting is the Al doped MgxZn1-xO films for their electrical properties that make it very attracting for solar cell application. In this work, the Mg distribution in Al doped Mg(x)Zn(1-)xO films was investigated in order to find a reliable methods to determine Mg distribution. In particular, X-ray diffraction, Auger electron spectroscopy and time of flight secondary ion mass spectrometry were used to characterize the film. Time of flight secondary ion mass spectrometry MCs+ results appear to be the most promising analytical technique. Copyright (C) 2014 John Wiley & Sons, Ltd.
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页码:823 / 826
页数:4
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